Samsung MMCRE28G5MXP-0VB00 Datenblatt PDF herunterladen (Seite 23)

JANUARY 2009

DDR SYNCHRONOUS SRAM

Type Density Organization Part

Number

# Pins-

Package

Vdd (V) Access Time

tCD (ns)

Cycle Time

(MHz)

I/O Voltage

(V)

Production

Status

Comments

DDR

16Mb

512K x36 K7D163674B 153-BGA 1.8~2.5 2.3 330, 300 1.5~1.9 Mass Production

1M x18 K7D161874B 153-BGA 1.8~2.5 2.3 330, 300 1.5~1.9 Mass Production

8Mb

256K x36 K7D803671B 153-BGA 2.5 1.7/1.9/2.1 333, 330, 250 1.5(Max 2.0) Not for new designs

512K x18 K7D801871B 153-BGA 2.5 1.7/1.9/2.1 333, 330, 250 1.5(Max 2.0) Not for new designs

DDR

II CIO/

SIO

72Mb

4M x18

K7I641882M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-2B

K7I641884M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-4B

K7J641882M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production SIO-2B

2M x36

K7I643682M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-2B

K7I643684M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-4B

K7J643682M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production SIO-2B

36Mb

2M x18

K7I321882C 165-FBGA 1.8 0.45 333,300,250 1.5,1.8 Mass Production CIO-2B

K7I321884C 165-FBGA 1.8 0.45 333,300,250 1.5,1.8 Mass Production CIO-4B

K7J321882C 165-FBGA 1.8 0.45 333,300,250 1.5,1.8 Mass Production SIO-2B

1M x36

K7I323682C 165-FBGA 1.8 0.45 333,300,250 1.5,1.8 Mass Production CIO-2B

K7I323684C 165-FBGA 1.8 0.45 333,300,250 1.5,1.8 Mass Production CIO-4B

K7J323682C 165-FBGA 1.8 0.45 333,300,250 1.5,1.8 Mass Production SIO-2B

18Mb

1M x18

K7I161882B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-2B

K7I161884B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-4B

K7J161882B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production SIO-2B

512K x36

K7J163682B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production SIO-2B

K7I163682B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-2B

K7I163684B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-4B

DDR II+

CIO

36Mb

2M x18 K7K3218T2C 165-FBGA 1.8 0.45 450, 400, 333 1.5 Mass Production DDRII + CIO-2B

1M x36 K7K3236T2C 165-FBGA 1.8 0.45 450, 400, 333 1.5 Mass Production DDRII + CIO-2B

18Mb

1M x18 K7K1618T2C 165-FBGA 1.8 0.45 450, 400, 333 1.5 Mass Production DDRII + CIO-2B

512K x36 K7K1636T2C 165-FBGA 1.8 0.45 450, 400, 333 1.5 Mass Production DDRII + CIO-2B

NOTES: 2B = Burst of 2

4B = Burst of 4

SIO = Separate I/O

CIO = Common I/O

For DDR II CIO/SIO: C-die use 330, 300, or 250MHz instad of 200MHz or 167MHz using a stable DLL circuit

For DDR II+ CIO: 2-clock latency is available. A 2.5-clock latency can be supported on 18Mb at 500Mhz and 36Mb at 450MHz

www.samsung.com/semi/sram

DDRI/II/II+

SRAM

1 2 ... 18 19 20 21 22 23 24 25 26 27 28 ... 35 36

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